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GeneSiC Semiconductor is a leading manufacturer of Silicon Carbide (SiC) power devices and modules. The company was founded in 2004 and is headquartered in Dulles, Virginia, USA. GeneSiC Semiconductor is dedicated to providing high-performance, high-reliability, and cost-effective SiC-based power electronics solutions for a wide range of applications, including renewable energy, transportation, industrial, and military. SiC is a wide-bandgap semiconductor material that offers superior performance compared to traditional silicon-based power devices. SiC devices have higher breakdown voltage, faster switching speed, lower on-resistance, and better thermal conductivity, which results in higher efficiency, smaller size, and lower cost of ownership. GeneSiC Semiconductor has developed a comprehensive portfolio of SiC-based power devices, including Schottky diodes, MOSFETs, junction transistors, and thyristors, as well as SiC-based power modules that integrate multiple devices into a single package. GeneSiC Semiconductor's products are designed to meet the most demanding requirements of modern power electronics systems. The company's SiC-based power devices and modules are capable of operating at high temperatures, high voltages, and high frequencies, making them ideal for use in harsh environments. GeneSiC Semiconductor's products are also highly reliable, with low failure rates and long lifetimes, which is critical for applications that require continuous operation. GeneSiC Semiconductor has a strong commitment to research and development, and the company invests heavily in new product development and technology innovation. The company has a team of experienced engineers and scientists who are dedicated to advancing the state-of-the-art in SiC-based power electronics. GeneSiC Semiconductor also collaborates with leading universities and research institutions to stay at the forefront of SiC technology. In conclusion, GeneSiC Semiconductor is a leading manufacturer of SiC-based power devices and modules, offering high-performance, high-reliability, and cost-effective solutions for a wide range of applications. The company's commitment to research and development, combined with its expertise in SiC technology, makes it a trusted partner for customers who require the best in power electronics.

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>G3R350MT12D G3R350MT12D GeneSiC Semiconductor - Tube
10305
 SIC MOSFET N-CH 11A TO247-3 39.55
>G2R1000MT17D G2R1000MT17D GeneSiC Semiconductor - Tube
9322
 SIC MOSFET N-CH 4A TO247-3 39.55
>G3R350MT12J G3R350MT12J GeneSiC Semiconductor - Tube
8342
 SIC MOSFET N-CH 11A TO263-7 48.08
>G2R1000MT17J G2R1000MT17J GeneSiC Semiconductor - Tube
11619
 SIC MOSFET N-CH 3A TO263-7 50.23
>G3R75MT12D G3R75MT12D GeneSiC Semiconductor - Tube
6645
 SIC MOSFET N-CH 41A TO247-3 86.09
>G3R75MT12K G3R75MT12K GeneSiC Semiconductor - Tube
1798
 SIC MOSFET N-CH 41A TO247-4 90.93
>G3R160MT17D G3R160MT17D GeneSiC Semiconductor - Tube
1884
 SIC MOSFET N-CH 21A TO247-3 93.08
>G3R75MT12J G3R75MT12J GeneSiC Semiconductor - Tube
100
 SIC MOSFET N-CH 42A TO263-7 93.7
>G3R40MT12D G3R40MT12D GeneSiC Semiconductor - Tube
1010
 SIC MOSFET N-CH 71A TO247-3 142.62
>G3R40MT12J G3R40MT12J GeneSiC Semiconductor - Tube
1090
 SIC MOSFET N-CH 75A TO263-7 149.45
>G3R30MT12K G3R30MT12K GeneSiC Semiconductor - Tube
1005
 SIC MOSFET N-CH 90A TO247-4 187.31
>G3R30MT12J G3R30MT12J GeneSiC Semiconductor - Tube
1959
 SIC MOSFET N-CH 96A TO263-7 189.08
>G3R45MT17D G3R45MT17D GeneSiC Semiconductor - Tube
687
 SIC MOSFET N-CH 61A TO247-3 266.03
>G3R45MT17K G3R45MT17K GeneSiC Semiconductor - Tube
446
 SIC MOSFET N-CH 61A TO247-4 271.64
>G3R20MT12K G3R20MT12K GeneSiC Semiconductor - Tube
947
 SIC MOSFET N-CH 128A TO247-4 295.68
>G3R20MT12N G3R20MT12N GeneSiC Semiconductor - Tube
627
 SIC MOSFET N-CH 105A SOT227 433.46
>G3R20MT17K G3R20MT17K GeneSiC Semiconductor - Tube
319
 SIC MOSFET N-CH 124A TO247-4 736.12
>G2R120MT33J G2R120MT33J GeneSiC Semiconductor - Tube
616
 SIC MOSFET N-CH TO263-7 778.52
>G3R160MT12D G3R160MT12D GeneSiC Semiconductor - Tube
764
 SIC MOSFET N-CH 22A TO247-3 54.68
>GA10JT12-263 GA10JT12-263 GeneSiC Semiconductor - Tube
544
 TRANS SJT 1200V 25A 159.28
>GA20JT12-263 GA20JT12-263 GeneSiC Semiconductor - Tube
214
 TRANS SJT 1200V 45A D2PAK 292.84
>G3R60MT07D G3R60MT07D GeneSiC Semiconductor - Tube
519
 750V 60M TO-247-3 G3R SIC MOSFET 89.78
>G3R60MT07K G3R60MT07K GeneSiC Semiconductor - Tube
607
 750V 60M TO-247-4 G3R SIC MOSFET 94.08
>G3R20MT17N G3R20MT17N GeneSiC Semiconductor - Tube
260
 SIC MOSFET N-CH 100A SOT227 918.45
>G3R60MT07J G3R60MT07J GeneSiC Semiconductor - Tube
170
 750V 60M TO-263-7 G3R SIC MOSFET 97.15
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G2R1000MT17D
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G3R30MT12K
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G3R30MT12J
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GeneSiC Semiconductor
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>G3R45MT17D
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SIC MOSFET N-CH 61A TO247-3
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SIC MOSFET N-CH 61A TO247-4
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SIC MOSFET N-CH 124A TO247-4
>G2R120MT33J
G2R120MT33J
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SIC MOSFET N-CH TO263-7
>G3R160MT12D
G3R160MT12D
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>GA10JT12-263
GA10JT12-263
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>GA20JT12-263
GA20JT12-263
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TRANS SJT 1200V 45A D2PAK
>G3R60MT07D
G3R60MT07D
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750V 60M TO-247-3 G3R SIC MOSFET
>G3R60MT07K
G3R60MT07K
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750V 60M TO-247-4 G3R SIC MOSFET
>G3R20MT17N
G3R20MT17N
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GeneSiC Semiconductor
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SIC MOSFET N-CH 100A SOT227
>G3R60MT07J
G3R60MT07J
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GeneSiC Semiconductor
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750V 60M TO-263-7 G3R SIC MOSFET

323 302 3678

scarlett@usecgi.com,martin@usecgi.com

scarlett@usecgi.com
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